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| CM75TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMODTM H-Series Module 75 Amperes/1400 Volts B D X QX QX Z - M5 THD (7 TYP.) S N BuP EuP BvP EvP BwP EwP P R L C N P P BuN EuN BvN EvN BwN EwN J TYP U N V W A K T G F U W AA M M E AA Y - DIA. (4 TYP.) .110 TAB H J V P BuP EuP u BvP EvP v BwP EwP w P Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-28H is a 1400V (VCES), 75 Ampere Six-IGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 28 BuN EuN N BvN EvN BwN EwN N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.540.01 3.150.01 1.57 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.00.25 80.00.25 40.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V W X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 Rad. 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12.0 11.0 10.0 8.5 7.5 Rad. 6.0 6.0 5.5 M5 2.0 351 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-28H Six-IGBT IGBTMODTM H-Series Module 75 Amperes/1400 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Characteristics Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E-SHORT) Gate-Emitter Voltage (C-E-SHORT) Collector Current Peak Collector Current Diode Forward Current Diode Forward Pulse Current Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IEC IECM Pd - - - VRMS CM75TF-28H -40 to 150 -40 to 125 1400 20 75 150* 75 150* 600 17 17 830 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V IC = 75A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 800V, IC = 75A, VGS = 15V IE = 75A, VGS = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 383 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCC = 800V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.75 Max. 15 5.3 3 150 350 250 500 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.21 0.47 0.025 Units C/W C/W C/W 352 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-28H Six-IGBT IGBTMODTM H-Series Module 75 Amperes/1400 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 120 Tj = 25oC 12 120 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 15 14 150 13 VCE = 10V Tj = 25C Tj = 125C 5 VGE = 15V Tj = 25C Tj = 125C 4 90 11 90 3 60 10 60 2 30 9 8 30 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 30 60 90 120 150 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C Tj = 25C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 101 Cies 102 6 IC = 150A 100 Coes 4 IC = 75A 101 2 10-1 VGE = 0V f = 1MHz IC = 30A Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 VCC = 800V VGE = 15V RG = 4.2 Tj = 125C 103 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 75A 16 SWITCHING TIME, (ns) 103 td(off) VCC = 600V VCC = 800V t rr 12 102 100 tf 102 td(on) 8 di/dt = -150A/sec Tj = 25C 4 101 101 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 150 300 450 600 GATE CHARGE, QG, (nC) 353 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-28H Six-IGBT IGBTMODTM H-Series Module 75 Amperes/1400 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.21C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.47C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 354 |
Price & Availability of CM75TF-28H
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